Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Ultra-Flat 4" Silicon Wafers Topcon longevity (approximately 20 – geelani.com
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Ultra-Flat 4" Silicon Wafers Topcon longevity (approximately 20

SKU: 57157859421

4.3
USD171.25 USD202.25

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Ships within 48 hours · Estimated delivery Aug 26 - Aug 31

Description

longevity (approximately 20

Includes a chip carrier (model 00-107-009)

charged surfaces: Portmann

Hydrophobic coating offers novel platform for deposition and growth of nanomaterials

Controlled Radius Tip

Ultra-Flat 4" Silicon Wafers Topcon longevity (approximately 20DESCRIPTION Ultra Flat 4" Silicon Wafer for demanding substrate studies. Can also be used as substrate for AFM or SEM samples by dicing the wafer into smaller pieces using a Scriber and the Wafer Cleaving Glass Breaking Pliers. The 4" ultra flat silicon wafer is shipped in a 4" wafer carrier. Properties for 4" (100mm) Ultra Flat Wafer: Orientation: <100> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:

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