MG200Q2YS51-TOSHIBA First 50 Center tap diode configuration simplifies

Center tap diode configuration simplifies circuit design for rectifier and freewheeling applications

offering excellent switching speed and low collector-emitter saturation voltage

Part Number SKM200GB123D Manufacturer SEMIKRON Type IGBT Module Current Rating 200A Voltage Rating 1200V Availability In Stock Condition New / Factory Original Key Features:

Industry-standard package footprint compatible with Fuji and equivalent-platform power stack hardware

Quick Reference: 6MBI25L-120

MG200Q2YS51-TOSHIBA First 50 Center tap diode configuration simplifiesThe Toshiba MG200Q2YS51 is a high current IGBT power module engineered for use in high frequency switching topologies where thermal reliability and consistent gate drive response are critical. Rated at 200A, this module is constructed to Toshiba's established quality benchmarks and is well suited for integration into variable frequency drives, industrial inverters, and medium to large servo amplifier platforms. Its robust internal layout supports low