Pay in 4 interest-free payments of $42.50 Learn more
Ships within 48 hours · Estimated delivery Aug 22 - Aug 27
and specializes in power semiconductors including IGBTs
Built on Fuji's proven L-series IGBT technology
high-voltage dual IGBT module manufactured by Mitsubishi Electric
Dual (2-in-1) IGBT configuration ideal for half-bridge inverter topologies
130A continuous on-state current for high-power industrial loads
7MBR10SA120F-51-FUJI Desc and specializes in power semiconductorsThe 7MBR10SA120F 51 is a Fuji Electric 7 pack IGBT module combining seven insulated gate bipolar transistors in a single compact package rated at 10 amperes and 1200 volts. This module incorporates integrated gate drive circuitry and protection features, making it an ideal solution for engineers designing space constrained inverter systems, variable frequency drives, and industrial power conversion equipment where reliability and switching performance
US$ 1141.50
US$ 5450.00
US$ 23764.50
US$ 13985.00
US$ 98.09
US$ 371.60
