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Ships within 48 hours · Estimated delivery Aug 9 - Aug 14
with full confidence in part authenticity and OEM condition
Designed for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage
Low VCE(sat) characteristics reduce conduction losses and thermal stress during continuous switching operation
Part Number FZ800R12KE3 Manufacturer Infineon Technologies Type IGBT Module Collector Current (IC) 800A Collector-Emitter Voltage (VCES) 1200V Availability In Stock Condition New Key Features:
HVDC transmission systems
MG150J2YS1-TOSHIBA Desc with full confidence in partThe Toshiba MG150J2YS1 is a 150 ampere, 600 volt IGBT power module engineered for medium to high power switching applications requiring low conduction losses and stable thermal performance. Housed in a standard isolated base module package, the MG150J2YS1 integrates an IGBT with a freewheeling diode in a configuration suited for inverter leg and chopper circuit topologies. Its rugged construction and proven gate characteristics make it a preferred
US$ 12.00
US$ 12.95
US$ 442.50
