2MBI200S-120-02-FUJI Desc Low VCE(sat) characteristics reduce conduction

Low VCE(sat) characteristics reduce conduction losses and minimize heat sink requirements in high-duty-cycle operation

The Mitsubishi CM300E3U-12H is a 1200V IGBT module engineered for demanding power conversion applications where switching efficiency

Quick Reference: MG100H2CL1

Designed for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage

This device integrates six IGBT switches with optimized gate drive circuitry

2MBI200S-120-02-FUJI Desc Low VCE(sat) characteristics reduce conductionThe 2MBI200S 120 02 is a high performance dual IGBT module manufactured by Fuji Electric, rated for 200 amperes and 1200 volts. Built on Fuji's proven S series IGBT technology, this module offers low collector emitter saturation voltage (VCE(sat)) and optimized switching characteristics, making it an excellent choice for high efficiency power conversion in industrial and commercial applications. The robust construction and integrated freewheeling