Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs Complete polarization of electronic spins

Complete polarization of electronic spins in OLEDs

Plus improved aerodynamics and mechanical performance produce more uniform films

5-dithia-s-indacen-2-yl]-9-(3-dimethylamino-propyl)-7-methyl-9H-fluoren-9-yl]-propyl}-dimethylamine (PBN)

10-Bis(2-naphthyl)anthracene (ADN)

Soft-tipped probes Sharp-tipped probes Please note: Your Ossila Four-Point Probe will require screen firmware version 1

Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs Complete polarization of electronic spinsHigh Density Gate Deposition Mask Enabling accurate deposition resolution An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 100 m standoff spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution. Mask with direct contact (no spacer): For sputtering and other non directional deposition systems, as well as for thermal deposition systems with oblique angles